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APTGT200SK120D3G
Buck Chopper Trench + Field Stop IGBT Power Module
3
VCES = 1200V IC = 200A @ Tc = 80C
Q1 4 5
Application * AC and DC motor control * Switched Mode Power Supplies Features * Trench + Field Stop IGBT Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated * Kelvin emitter for easy drive * High level of integration * M6 power connectors Benefits * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * RoHS Compliant
1
2
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25C TC = 80C TC = 25C TC = 25C Tj = 125C Max ratings 1200 300 200 400 20 1050 400A @ 1100V Unit V A V W
September, 2008 1-5 APTGT200SK120D3G - Rev 1
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTGT200SK120D3G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1200V Tj = 25C VGE = 15V IC = 200A Tj = 125C VGE = VCE , IC = 8mA VGE = 20V, VCE = 0V Min 1.4 5.0 Typ 1.7 2.0 5.8 Max 500 2.1 6.5 400 Unit A V V nA
Dynamic Characteristics
Symbol Characteristic Cies Input Capacitance Crss Reverse Transfer Capacitance QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Isc Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn on Energy Turn off Energy Short Circuit data Test Conditions VGE = 0V,VCE = 25V f = 1MHz VGE=15V, IC=200A VCE=600V Inductive Switching (25C) VGE = 15V VBus = 600V IC = 200A RG = 3.6 Inductive Switching (125C) VGE = 15V VBus = 600V IC = 200A RG = 3.6 VGE = 15V Tj = 125C VBus = 600V IC = 200A Tj = 125C RG = 3.6 VGE 15V ; VBus = 900V tp 10s ; Tj = 125C Min Typ 14 0.6 1.9 250 90 550 130 300 100 650 180 15 mJ 35 800 A Max Unit nF C
ns
ns
Reverse diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRRM IF VF trr Qrr Err Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy IF = 200A VR = 600V IF = 200A VGE = 0V Test Conditions VR=1200V Tj = 25C Tj = 125C Tc = 80C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
di/dt =3500A/s
Min 1200
Typ
Max 750 1000
Unit V A A
280 22 40 9 16
ns C mJ
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2-5
APTGT200SK120D3G - Rev 1
September, 2008
200 1.6 1.6 170
2.1
V
APTGT200SK120D3G
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight For terminals To Heatsink M6 M6 IGBT Diode 2500 -40 -40 -40 3 3 Min Typ Max 0.12 0.20 150 125 125 5 5 350 Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
D3 Package outline (dimensions in mm)
1
A
DETAIL A
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3-5
APTGT200SK120D3G - Rev 1
September, 2008
APTGT200SK120D3G
Typical Performance Curve
Output Characteristics (VGE=15V) 400
TJ=25C TJ=125C
Output Characteristics 400
TJ = 125C VGE=17V VGE=13V VGE=15V
300 IC (A)
300 IC (A)
200
200
VGE=9V
100
100
0 0 0.5 1 1.5 2 2.5 3 3.5 VCE (V) Transfert Characteristics
0 0 0.5 1 1.5 2 2.5 VCE (V) 3 3.5 4
Energy losses vs Collector Current 75
VCE = 600V VGE = 15V RG = 3.6 TJ = 125C Eoff
400
TJ=25C
300 E (mJ) IC (A)
60 45 30 15 0 5 6 7 8 9 10 11 12 0
200
Eon Err
100
TJ=125C
0 VGE (V) Switching Energy Losses vs Gate Resistance 70 60 50 E (mJ) 40 30 20 10 0 0 4 8 12 16 20 Gate Resistance (ohms) 24
Err VCE = 600V VGE =15V IC = 200A TJ = 125C Eoff
100
200 IC (A)
300
400
Reverse Bias Safe Operating Area 500
Eon
400 IC (A) 300 200 100 0 0 300 600 900 1200 1500 VCE (V)
VGE=15V TJ=125C RG=3.6
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.14 Thermal Impedance (C/W) 0.12 0.1 0.08 0.06 0.04 0.02 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 Single Pulse 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) 1 10
IGBT
0 0.00001
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4-5
APTGT200SK120D3G - Rev 1
September, 2008
APTGT200SK120D3G
Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 50 40
ZCS VCE=600V D=50% RG=3.6 TJ=125C TC=75C
Forward Characteristic of diode 400
TJ=25C
300 IF (A)
30 20 10 0 0 40 80 120 160 IC (A)
Hard Switching ZVS
200
100
TJ=125C
0 200 240 280 0 0.4 0.8 1.2 VF (V) 1.6 2 2.4
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.25 Thermal Impedance (C/W)
Diode
0.2 0.15 0.1 0.05 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10
0 0.00001
rectangular Pulse Duration (Seconds)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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5-5
APTGT200SK120D3G - Rev 1
September, 2008

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